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Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

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Related Experiment Video

Updated: Apr 1, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

PdNeuRAM: forming-free, multi-bit Pd/HfO₂ ReRAM for energy-efficient neuromorphic computing.

Erbing Hua¹, Theofilos Spyrou², Majid Ahmadi^3,4

¹Department of Quantum and Computer Engineering, Delft University of Technology, Delft, The Netherlands. e.hua@tudelft.nl.

Communications Engineering

|March 30, 2026

Summary

This summary is machine-generated.

New memristor devices eliminate the need for high-voltage electroforming, enabling energy-efficient computing. These palladium-hafnia (Pd/HfO2) devices reduce power consumption for neuromorphic applications.

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Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Memristor technology promises energy-efficient computing but faces challenges like resistance drift, variability, and electroforming.
Filamentary resistive random-access memory (RRAM) typically requires high-voltage electroforming, increasing power and reducing endurance.

Purpose of the Study:

To develop forming-free memristive devices based on HfO2.
To investigate the mechanism behind forming-free resistive switching.
To demonstrate the potential for energy-efficient neuromorphic computing.

Main Methods:

Fabrication of HfO2-based memristive devices with Pd and Ti electrodes.
Combined electrical and materials characterization (e.g., XPS, TEM).
Analysis of oxygen vacancy formation and migration barriers.

Main Results:

Developed Pd/HfO2 forming-free memristive devices (PdNeuRAM) operating at low voltages.
Identified a Pd-O-Hf interfacial configuration facilitating forming-free switching.
Achieved reduced programming (43%) and read (38%) energy in spiking neural network tasks.

Conclusions:

Interfacial engineering in Pd/HfO2 devices eliminates the need for electroforming.
These devices offer multi-bit functionality, reduced variability, and lower energy consumption.
Demonstrated potential for energy-efficient neuromorphic computing applications.