Related Experiment Video
Updated: Apr 1, 2026
06:00
Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats
Published on: June 13, 2018
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Molecular Insights into Oxime-Containing Group 4 Transition Metal Precursors for Atomic Layer Deposition
Seungjin Song1, Ji Woon Choi1, Sung Kwang Lee1
1Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea.
Inorganic Chemistry
|March 31, 2026
Summary
Six new organometallic precursors with oxime ligands were synthesized for atomic layer deposition (ALD). CpZr(tmox)3 shows potential for controlling thin film properties, offering insights into functional group effects in ALD.
Area of Science:
- Organometallic Chemistry
- Materials Science
- Chemical Vapor Deposition
Background:
- Atomic Layer Deposition (ALD) requires stable metal precursors.
- Oxime ligands offer tunable properties for precursor design.
- Understanding ligand effects is crucial for developing advanced ALD processes.
Purpose of the Study:
- Synthesize and characterize novel organometallic precursors for ALD.
- Evaluate the thermal stability and ALD performance of these precursors.
- Investigate the influence of oxime ligands on thin film properties and surface adsorption.
Main Methods:
- Synthesis of homoleptic and heteroleptic organometallic complexes.
- Characterization using NMR, FT-IR, and SC-XRD.
- Thermogravimetric analysis (TGA) for thermal stability assessment.
- Atomic Layer Deposition (ALD) experiments and thin film analysis.
Main Results:
- Six novel organometallic complexes with tert-butyl methyl ketone oxime (tmoxH) ligands were successfully synthesized.
- Complexes exhibited varying thermal stabilities suitable for ALD applications.
- CpZr(tmox)3 demonstrated the ability to modulate thin film defect density and phase structure.
- Comparison revealed functional group effects on surface adsorption during ALD.
Conclusions:
- The synthesized tmox-based complexes are promising candidates for ALD metal precursors.
- CpZr(tmox)3 offers control over thin film characteristics, highlighting its potential in semiconductor fabrication.
- The study provides valuable insights into the structure-property relationships of oxime ligands in ALD.
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