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Updated: Apr 2, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
First principles calculations of electronic structure and optical properties of high-throughput
Yaxin Gao1, Liang Sun1, Jie Chen2
1College of Materials Science and Engineering, Xi'an Shiyou University, Xi'an, People's Republic of China.
This study used computational methods to explore doping effects on Indium Oxide (In2O3). Gallium, Molybdenum, and Tungsten doping significantly enhance In2O3
Area of Science:
- Materials Science
- Solid State Physics
- Computational Chemistry
Background:
- Indium Oxide (In2O3) is a semiconductor with promising optoelectronic properties.
- Its wide bandgap and low resistivity make it suitable for various electronic applications.
- Understanding doping effects is crucial for optimizing In2O3 performance.
Purpose of the Study:
- To investigate the electronic and optical properties of pristine and doped In2O3 using first-principles calculations.
- To evaluate the impact of various dopants (Mo, Ti, N, Ga, Ir, La, W) on In2O3.
- To establish a computational framework for designing enhanced In2O3-based materials.
Main Methods:
- Employed the hybrid functional Heyd-Scuseria-Ernzerhof (HSE06) method for calculations.
- Systematically analyzed pristine and doped In2O3 structures.
- Utilized density of states (DOS) and dielectric functions for mechanistic insights.
Main Results:
- HSE06 method accurately predicted In2O3 band structure (bandgap: 2.168 eV).
- Mo, W, and Ga doping significantly improved optoelectronic performance.
- Ga doping enhanced bandgap and visible light absorption; Mo/W doping improved conductivity.
Conclusions:
- Doping offers a viable strategy to tailor In2O3 for advanced applications.
- Ga-doped In2O3 shows optimized visible-light harvesting.
- Computational framework provides insights for designing high-performance transparent conductive oxides.
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