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Unusual pressure-enhanced resistance in the van der Waals ferromagnet Fe3GaTe2
Wenting Zhang1, Haihong Xu1, Jiang Zhang1
1School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, People's Republic of China.
Abstract:
The pressure-dependent electronic transport and magnetic properties of the van der Waals (vdW) ferromagnetic metal Fe3GaTe2were systematically investigated by high-pressure resistance and magnetoresistance (MR) measurements in both in-plane and out-of-plane (OOP) configurations. At low pressures, the resistances in both directions decrease with increasing pressure. However, above ∼13 GPa, an anomalous behavior emerges in which the resistance increases upon further compression, with a much stronger pressure dependence observed in the OOP direction. Around 27.8 GPa, a distinct kink appears in the OOP resistance, accompanied by a pronounced reduction of transport anisotropy. These anomalous transport features are closely correlated with the pressure evolution of MR, indicating pressure-induced electronic reconstruction associated with magnetic state evolution. Our results reveal a multistage pressure response in Fe3GaTe2and provide insights into the strong coupling between electronic transport and magnetism in layered vdW ferromagnets.
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