In-fibre logic and memory via tuneable passivation-corrosion

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Science

Background:

• Traditional textile electronics face integration challenges due to rigid components and von Neumann architecture.
• Seamless integration of digital capabilities into textiles requires flexible and adaptable electronic systems.

Purpose of the Study:

• To develop a novel single-fiber electronic device capable of both logic and memory functions.
• To overcome the limitations of existing textile electronic systems for enhanced user interaction and data processing.

Main Methods:

• A single-fiber logic/memory electronic device was created using interface passivation-corrosion.
• The device's ability to switch between diode and memristor functionalities was investigated.
• The fiber's stretchability (up to 50%) and compatibility with weaving techniques were assessed.

Main Results:

• The developed fiber operates as a diode or memristor without traditional carrier heterojunction interfaces.
• Diode mode exhibits superior stability under high voltage and extended cycling compared to existing technologies.
• Demonstrated applications include logic gates (AND, OR), neuromorphic synapses, and textile memristor arrays.

Conclusions:

• Regulated passivation-corrosion enables logic and memory functions within fibers.
• This technology offers a promising pathway for next-generation textile computing.
• The stretchable and integrable nature of these fibers paves the way for advanced smart textiles.