Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

The Electrical Double Layer

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same authorSame journal

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026

Same author

Discovery of flat-band 2D materials via physics-informed scoring and structure-based learning.

Science advances·2026

Same author

Simultaneous nanoscale imaging of local conductivity and chemical potential in a quantum Hall isospin ferromagnet.

Nature communications·2026

Same author

Printable van der Waals Nanoparticles for Additive Technologies.

Nano letters·2026

Same author

Near- or Above-Room-Temperature Two-Dimensional Ferromagnetic Fe-M-Te (M = Ge, Ga) Compounds for van der Waals Spintronics.

Nano letters·2026

Same author

Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies.

Nano letters·2026

Search research articles

Related Experiment Video

Updated: Apr 2, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Stacking-Induced Ferroelectricity in Tetralayer Graphene.

Amit Singh^1,2, Shuigang Xu^3,4, Patrick Johansen Sarsfield^1,2

¹Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.

|April 1, 2026

Summary

This summary is machine-generated.

Ferroelectricity is achieved in ABCB tetralayer graphene by breaking symmetry. This stacking-order-induced effect enables robust, room-temperature nonvolatile memory applications.

Keywords:

ferroelectricity polarization ratchet effect sliding ferroelectricity tetralayer graphene

More Related Videos

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Related Experiment Videos

Last Updated: Apr 2, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Area of Science:

Condensed matter physics
Materials science
Nanotechnology

Background:

Graphene's centrosymmetric lattice prevents ferroelectricity.
Mixed-stacked graphene, like ABCB tetralayer, breaks symmetry.

Purpose of the Study:

To demonstrate robust ferroelectric behavior in ABCB tetralayer graphene.
To explore the potential for nonvolatile memory applications.

Main Methods:

Encapsulating ABCB tetralayer graphene in hexagonal boron nitride.
Applying top and bottom gate modulation to observe resistance hysteresis.
Investigating transitions between ABCB and BCBA stacking configurations.

Main Results:

Robust ferroelectric behavior observed in ABCB tetralayer graphene.
Pronounced resistance hysteresis persisting up to room temperature.
Reversible layer-polarized charge reordering driving ferroelectricity.

Conclusions:

Stacking-order-induced symmetry breaking is a viable route to ferroelectricity.
ABCB tetralayer graphene shows promise for nonvolatile memory devices.
This research opens new avenues for exploring ferroelectricity in layered materials.