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Stacking-Induced Ferroelectricity in Tetralayer Graphene
Amit Singh1,2, Shuigang Xu3,4, Patrick Johansen Sarsfield1,2
1Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
Ferroelectricity is achieved in ABCB tetralayer graphene by breaking symmetry. This stacking-order-induced effect enables robust, room-temperature nonvolatile memory applications.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Graphene's centrosymmetric lattice prevents ferroelectricity.
- Mixed-stacked graphene, like ABCB tetralayer, breaks symmetry.
Purpose of the Study:
- To demonstrate robust ferroelectric behavior in ABCB tetralayer graphene.
- To explore the potential for nonvolatile memory applications.
Main Methods:
- Encapsulating ABCB tetralayer graphene in hexagonal boron nitride.
- Applying top and bottom gate modulation to observe resistance hysteresis.
- Investigating transitions between ABCB and BCBA stacking configurations.
Main Results:
- Robust ferroelectric behavior observed in ABCB tetralayer graphene.
- Pronounced resistance hysteresis persisting up to room temperature.
- Reversible layer-polarized charge reordering driving ferroelectricity.
Conclusions:
- Stacking-order-induced symmetry breaking is a viable route to ferroelectricity.
- ABCB tetralayer graphene shows promise for nonvolatile memory devices.
- This research opens new avenues for exploring ferroelectricity in layered materials.
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