Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites

Area of Science:

• Materials Science
• Condensed Matter Physics
• Spintronics

Background:

• Conventional spin valves are limited to binary states by magnetic fields.
• This limits their functional versatility and integration density.
• Chiral hybrid perovskites offer unique optical and electronic properties.

Purpose of the Study:

• To develop a spin valve with enhanced control dimensions beyond magnetic fields.
• To explore the integration of circularly polarized light for modulating device resistance.
• To demonstrate multistate memory capabilities using chiral perovskite spin valves.

Main Methods:

• Fabrication of a spin valve device with a vertically aligned chiral hybrid perovskite spacer.
• Characterization of magnetoresistance under varying magnetic fields and temperatures.
• Investigation of the device's response to circularly polarized light (σ⁻ and σ⁺).

Main Results:

• The spin valve demonstrated a magnetoresistance ratio of approximately 5% at 10 K.
• Circularly polarized light induced a chirality-dependent photovoltaic effect, modulating baseline resistance.
• (S/R-NEA)₂FA₂Pb₃Br₁₀ devices showed differential responses to left- and right-handed circularly polarized light.

Conclusions:

• Combining magnetic field and optical control (dark, σ⁻, σ⁺) yielded up to six distinct, nonvolatile resistance levels.
• Chiral perovskites are promising for high-density multistate memory.
• This research opens avenues for novel spin-optoelectronic logic devices.