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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors.

Robert Tseng1,2,3, Yi-Hou Kuo4, Yi-Yu Pan1

  • 1Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

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|April 6, 2026
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Summary
This summary is machine-generated.

Device geometry controls charge transport in amorphous semiconductors. Reducing channel dimensions impacts percolation threshold (p_c) and transistor threshold voltage (V_T), revealing a universal scaling effect for future electronics.

Keywords:
amorphous semiconductorsdimensional scaling effectoxide semiconductorspercolation transportthreshold voltage shift

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Percolation theory describes charge transport in amorphous and polycrystalline semiconductors.
  • Transistor performance is typically understood through electrostatics and quantum confinement.

Purpose of the Study:

  • To identify and characterize a dimensional scaling effect in transistors utilizing percolative semiconductors.
  • To establish a quantitative link between the percolation threshold (p_c) and transistor threshold voltage (V_T).

Main Methods:

  • Investigating the correlation between semiconductor channel geometry and device electrical characteristics.
  • Utilizing scanning tunneling microscopy to visualize the percolation potential landscape.
  • Performing temperature-dependent transport measurements.

Main Results:

  • A strong correlation was found between the percolation threshold (p_c) and transistor threshold voltage (V_T).
  • Device geometry (thickness, width, length) fundamentally governs both p_c and V_T by constraining conductive pathways.
  • The Fermi level and potential barriers dictate device turn-on in percolative channels, confirmed by microscopy and transport measurements.
  • This geometric scaling effect is universal across n-type In2O3 and p-type SnO transistors.

Conclusions:

  • Transistor behavior in amorphous semiconductors is dominated by percolation transport, not conventional electrostatics.
  • Semiconductor channel geometry is a critical design parameter for amorphous electronic devices.
  • This study redefines the understanding of charge transport mechanisms in amorphous semiconductor devices.