Related Experiment Video
Updated: Apr 8, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Bulk nano-heterointerface secures molecular contacts in perovskite solar cells
Yixin Luo1, Jiahui Shen1,2,3, Ke Zhao1,2,4
1State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
None:
The development of molecule-based selective contacts has boosted the power conversion efficiencies of inverted perovskite solar cells. However, these molecular films, often assembled as monolayer or multiple layers on the substrate, are prone to molecular desorption and structural deformation, limiting the long-term stability of devices. This instability, in essence, originates from the weak contacting structure between the transparent conductive oxide and molecular layer, with a limited interface offering insufficient adhering forces to immobilize the molecules. A general architectural strategy that circumvents this fundamental limitation without compromising electronic functionality is highly demanded, but remains underexplored. We now report a universal architecture of a bulk nano-heterointerface that reconstructed the molecule-based selective layer. The substantially increased chemical interface and strengthened binding force between the molecules and rationally designed nanoscale scaffolds greatly improved the device operational stability, achieving high efficiency. The strategy proved versatile, successfully applied to various molecular systems to enhance device performances, and remained effective in upscaled devices produced via scalable blade coating.
More Related Videos
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

