Related Experiment Video
Updated: May 21, 2026
10:03
Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques
Published on: November 11, 2013
26.2K
From Inert to Active: Breaking Mott-localization Enables High Na-Storage Performance in Na4MnFe(PO4)3-based Cathode
Xiao-Tong Wang1, Zhen-Yi Gu1, Yan Liu1
1State Key Laboratory of Integrated Optoelectronics, MOE Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, Jilin, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|April 7, 2026
Summary
Researchers activated sodium-ion battery cathodes by breaking Mott localization. This strategy enhances electrochemical activity and enables sustainable energy storage solutions.
Area of Science:
- Materials Science
- Electrochemistry
- Solid-State Chemistry
Background:
- Sodium-ion batteries (SIBs) are promising for sustainable energy storage.
- Na4MnFe(PO4)3 (NMFP) offers high theoretical voltage and cost-effectiveness but suffers from poor electrochemical activity.
- This inactivity is linked to Mott localization in Mn2+ and Fe3+ ions.
Purpose of the Study:
- To investigate the cause of poor electrochemical activity in NMFP.
- To develop a strategy to overcome Mott localization and enhance NMFP performance.
- To establish a new design paradigm for sustainable cathode materials.
Main Methods:
- Symmetry-breaking reconstruction of the NMFP structure.
- Investigating electronic structure and charge localization.
- Analyzing Na+ migration pathways and energy barriers.
- Electrochemical performance testing of engineered materials.
Main Results:
- Mott localization due to symmetric, half-filled d-orbitals of Mn2+ and Fe3+ was identified as the primary cause of inactivity.
- Symmetry-breaking reconstruction successfully promoted electron delocalization and activated multiple redox couples (Mn and Fe).
- A novel, low-energy Na+ migration pathway ('Na2 dp Na1') was induced.
- The engineered Na4Mn0.5Fe0.5Cr0.5Ti0.5(PO4)3 exhibited a 12.74-fold capacity increase compared to pristine NMFP (138.84 vs. 10.9 mAh g-1).
Conclusions:
- Symmetry-breaking is a critical approach for activating Mott-localized states in polyanionic frameworks.
- This strategy provides a new paradigm for designing highly redox-active and sustainable cathode materials for SIBs.
More Related Videos
Related Concept Videos
01:13meta-Directing Deactivators: –NO2, –CN, –CHO, –CO2R, –COR, –CO2H
All meta-directing substituents are deactivating groups. These substituents withdraw electrons from the aromatic ring, making the ring less reactive toward electrophilic substitution. For example, the nitration of nitrobenzene is 100,000 times slower than that of benzene because of the deactivating effect of the nitro group. The first step in an electrophilic aromatic substitution is the addition of an electrophile to form a resonance-stabilized carbocation. The energy diagrams for the...
01:17Ion Exchange
Ion exchange chromatography separates charged molecules from a solution by reversibly exchanging them with mobile, or 'active', ions associated with the oppositely charged stationary phase. This method can be used to separate ions, soften and deionize water, and purify solutions. The polymers comprising the ion-exchange column are high-molecular-weight and chemically stable polymers, crosslinked to be porous and essentially insoluble. They are also functionalized with either acidic or basic...
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...