A novel p-n junction UiO-66/AgInS₂ for photodegradation of enrofloxacin under visible light

The formation of a heterogeneous junction between photocatalysts may be a potential solution for removing medicinal compounds from wastewater, which is crucial due to the environmental and health risks. The present study aims to investigate the efficacy of UiO-66/AgInS₂ p-n junction photocatalyst-a Zr-based metal-organic framework-in degradation of enrofloxacin (ENR) antibiotic using visible light. UiO-66, AgInS₂ (AIS), and UiO-66/AIS semiconductors were characterized using various techniques. The comparative analysis of particle structural parameters utilized diverse methodologies, and response surface methodology (RSM) was applied for the optimization of ENR degradation. The degradation kinetics of ENR were investigated. We identified UiO-66/AIS as a p-n junction semiconductor with a 1.71 eV direct band gap. Mott-Schottky analysis yielded E_CB and E_VB values of 1.72 V and 0.64 V for UiO-66 and -0.5 V and 1.05 V for AIS, respectively. The size-strain plot (SSP) method was determined to be the most effective in determining crystal dimensions, and a UiO-66/AIS p-n junction was instrumental in achieving 94.32% ENR degradation in a very short time using a pseudo-second-order kinetic model. The findings of this empirical study indicate that the UiO-66/AIS p-n junction has demonstrated exceptional efficiency in the removal of the ENR drug.