Monolayer MoS₂ Sensors for Probing the Self-Heating Effect in Indium Tin Oxide Nanoelectronics

Amorphous oxide semiconductors such as indium tin oxide (ITO) are promising channel materials for back-end-of-line memory and logic devices, yet their performance and reliability are hindered by self-heating at high power densities. Precise quantification of channel temperature and heat dissipation pathways into the surrounding materials is therefore essential for effective thermal management and the 3D heterogeneous integration of these devices. This work investigates heat dissipation in ultrathin ITO devices on sapphire by Raman thermometry, using an interfacial monolayer of MoS₂ as an in situ temperature sensor. Thermal boundary resistance of each interface in the device is independently measured by time-domain thermoreflectance and then used in finite-element simulations of device temperatures, thereby decoupling temperature measurements from interface characterization. Simulated temperatures incorporating measured electrical and thermal characteristics corroborate well with Raman thermometry. Our validated framework highlights the central role of interfacial resistance and heat spreading through the substrate on heat dissipation in thin-film nanoelectronics.