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Updated: Apr 11, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Graphene-Interlayered Sandwich Heterostructures with Step-like Band Alignment for Enhanced Electronic Transport and
Jidong Liu1, Yutao Hu1, Haolin Liu1
1State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
Abstract:
The integration of two-dimensional materials into van der Waals heterostructures provides a powerful strategy for developing advanced optoelectronic devices. Nevertheless, efficient photodetection remains challenging, as it demands precise management of carrier dynamics in terms of effective dissociation of excitons and rapid transport of charges across the heterointerfaces. Herein, we demonstrate a sandwich-type InSe/graphene/MoTe2 heterostructure by employing a band structure engineering strategy. The graphene interlayer establishes a step-like band alignment, thus promoting efficient separation and transport of photogenerated carriers at the interfaces. Consequently, alongside a prominent improvement in carrier mobility, the InSe/graphene/MoTe2 photodetector exhibits a fast photoresponse with a rise/fall time of 2.87/3.68 μs, 2 orders of magnitude faster than its bilayer InSe/MoTe2 counterpart. Furthermore, the InSe/graphene/MoTe2 photodetector is employed in imaging and optical signal encoding/decoding, demonstrating its potential for low-error-rate data transmission in the near-infrared region. This study opens new avenues for developing high-performance optoelectronic devices through interlayer band alignment engineering.
