Expression of concern: Null current hysteresis for acetylacetonate electron extraction layer in perovskite solar...

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Anodic Stripping Voltammetry (ASV), Cathodic Stripping Voltammetry (CSV), and Adsorptive Stripping Voltammetry (AdSV) are electrochemical techniques used to determine trace amounts of analytes in solution. These methods involve applying a potential to an electrode and measuring the resulting current.
Anodic Stripping Voltammetry (ASV)
ASV is used to determine metals and metalloids at trace levels. It involves two steps: deposition and stripping. First, a negative potential is applied to the...

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...