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Published on: March 24, 2019
Efficient Third-Harmonic Generation and the Strain Engineering Control of Polarization Anisotropy in TiS3
Shunhui Zhang1, Zhenzhen Wan1,2, Jin Dai1
1Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, Hunan, P. R. China.
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Strain engineering, as a key strategy for regulating two-dimensional (2D) material anisotropy, has demonstrated remarkable effectiveness in band engineering. However, systematic investigations of the third-order nonlinear-optical (NLO) response of low-symmetry materials under strain fields still pose a significant challenge. This study combines experimental and theoretical approaches to reveal for the first time the extreme sensitivity of third-harmonic generation (THG) anisotropy in quasi-one-dimensional-layered TiS3 to uniaxial strain. Due to the anisotropic reconstruction of interband transition dipole moment, the THG anisotropy ratio reaches 316.90 ± 7.93 under 7.25% a-axis strain, which is the largest reported in 2D materials, to our best knowledge. Based on the excellent third-order nonlinear anisotropy and strain regulation characteristics of TiS3, an all-optical Boolean logic gate based on NLO intensity encoding was further constructed. This work not only elucidates the strain-NLO coupling mechanism but also proposes a tunable nonlinear all-optical device based on anisotropic 2D materials.
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