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Ultra-broadband single-stack mid-infrared semiconductor lasers grown by MOCVD
Peng Liu1,2, Lequan Zhang1,2, Yujin Wu3
1State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
Abstract:
Quantum cascade lasers are highly desirable for chemical, physical, and biological research scenarios. Among the applications, mid-infrared frequency combs based on quantum cascade lasers have sparked increasing interest due to their unique advantages in small footprint, high power, and flexible designability. Despite significant performance improvement over a decade, the lasing spectrum bandwidths of the quantum cascade laser frequency combs are still limited to ~100 cm-1, limiting their applications in multi-gas spectroscopy and posing severe challenges in tracking their carrier-envelope offset frequency. To achieve a broad-gain spectrum, heterogeneous active regions consisting of multiple stacks of different wavelengths have been implemented. For example, stacking active regions of four different wavelengths results in a full width at half maximum of approximately 0.92 μm (110 cm-1) at 290 K, and of ~2.7 μm (360 cm-1) at 80 K. However, as more stages are stacked, ensuring a homogeneous and flat gain profile from both design and growth perspectives becomes very challenging. In this work, we present a demonstration of ultra-broadband quantum cascade lasers with a diagonal multi-state-to-continuum active region design. The proposed active region design exhibits a surprisingly wide electroluminescence with a full width at half maximum of ~600 cm-1 at 298 K. Devices, with a total peak output power of 2.72 W and a slope efficiency of 1.3 W/A, have shown a lasing spectrum of ~1 μm over 43% of the current dynamic range, with a maximum bandwidth of 1.2 μm around the rollover current. Moreover, a much broader lasing bandwidth of 1.93 μm is obtained from the same device at 80 K, accounting for 22% of the center wavelength. This work represents substantial progress on the single-stack ultra-broadband mid-infrared semiconductor lasers and may provide a novel platform for mid-infrared frequency combs, which are of paramount importance to broadband high-precision spectroscopy, imaging, and free-space communication systems.

