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Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors.
Seon Hoo Park1, Min Woo Jeong1, Ngoc Thanh Phuong Vo1
1Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Korea.
Nature Communications
|April 12, 2026
Summary
Researchers developed stretchable photoelectric memory transistors for advanced skin electronics. These devices offer reconfigurable logic and data storage, enabling intelligent, adaptive wearable technology.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Skin electronics demand mechanically flexible and computationally capable devices.
- Integrating sensing, storage, and logic in soft electronics remains a challenge.
Purpose of the Study:
- To develop intrinsically stretchable photoelectric memory transistors.
- To achieve optoelectrically reconfigurable logic-in-memory functionality in a soft form factor.
Main Methods:
- Fabrication of transistors using a nanoconfined polymer semiconductor and a functionalized dielectric.
- Optical programming and erasing using visible and ultraviolet light.
- Testing device performance under mechanical strain and cycling.
Main Results:
- Demonstrated stable operation of transistors under 30% biaxial strain and 1,000 mechanical cycles.
- Achieved robust data retention (10⁷ s) and endurance (10³ cycles).
- Showcased reconfigurable logic gate functionality at the single-transistor level.
Conclusions:
- Developed a wafer-scale platform for stretchable logic-in-memory architectures.
- Established a foundation for adaptive, intelligent skin electronics by co-localizing data storage and computation.
- The technology offers a new paradigm for wearable computing and electronic systems.
