Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective

Area of Science:

• Semiconductor device physics
• Materials science
• Electrical engineering

Background:

• Technological scaling of semiconductor devices is critical for the advancement of the electronics industry.
• Traditional 2D planar metal-oxide-semiconductor field-effect transistors (MOSFETs) have limitations for further miniaturization.

Purpose of the Study:

• To review the historical development of transistor architectures, focusing on gate-all-around nanowire (GAANW) FETs.
• To highlight the advantages of GAANW transistors for sub-3 nm technology nodes and beyond.
• To discuss future transistor technologies for the Angstrom Era.

Main Methods:

• Literature review and conceptual analysis of transistor evolution.
• Comparative analysis of different transistor architectures (planar, FinFET, GAANW).
• Technological roadmap projection for future semiconductor devices.

Main Results:

• Gate-all-around nanowire (GAANW) FETs offer significant advantages over planar and FinFET devices for continued scaling.
• GAANW transistors have progressed from concept to industrial adoption.
• Complementary FETs (CFETs) and 2D semiconductor-based FETs are identified as key technologies for the Angstrom Era.

Conclusions:

• GAANW FETs are crucial for next-generation semiconductor technology below 3 nm.
• Continued innovation in transistor design, including CFETs and 2D materials, is necessary to achieve the Angstrom Era.
• This perspective aims to guide future research in advanced transistor development.