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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Apr 14, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Unlocking the Potential of Inverted Perovskite Solar Cells by Mastering Interface Wettability.

Haifeng Wu¹, Xiaofei Chai¹, Jiaye Chen¹

¹Beijing University of Civil Engineering and Architecture, Beijing 100044, China.

ACS Applied Materials & Interfaces

|April 13, 2026

Summary

Controlling interface wettability is key to improving inverted perovskite solar cells (IPSCs). Understanding wettability mechanisms enhances perovskite film quality and device performance for commercialization.

Keywords:

absorption layer interface wettability inverted perovskite solar cell the buried perovskite–HTL interface thin film quality

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Last Updated: Apr 14, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

Flash Infrared Annealing for Perovskite Solar Cell Processing

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Published on: February 3, 2021

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

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Published on: March 2, 2021

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Inverted perovskite solar cells (IPSCs) show commercial promise due to high efficiency and manufacturing simplicity.
Perovskite film quality, particularly interface wettability, limits IPSC performance in solution-based fabrication.
The hole transport layer (HTL)-perovskite interface is critical in p-i-n PSC architectures.

Purpose of the Study:

To review the impact of interface wettability on perovskite crystallization, charge dynamics, and stability in IPSCs.
To analyze mechanisms by which wettability enhances perovskite film quality and device performance.
To guide future research for large-scale production and commercialization of IPSCs.

Main Methods:

Review and analysis of existing literature on interface wettability in perovskite solar cells.
Examination of wettability regulation strategies: interface engineering, precursor solution engineering, and post-treatment.
Analysis of the relationship between wettability, perovskite film properties, and device performance.

Main Results:

Interface wettability significantly influences perovskite crystallization, charge transport, recombination, and device stability.
Optimizing wettability can lead to substantial improvements in device performance.
Wettability regulation methods include interface, precursor, and post-treatment engineering.

Conclusions:

Decoding wettability mechanisms offers potential for optimizing IPSC performance.
Further research into low-cost wettability engineering is crucial for industrial application.
This review provides theoretical guidance for advancing IPSC technology towards commercialization.