An Integrated Multimethod Simulation Framework for Tin Debris Control in Extreme Ultraviolet Lithography

This protocol is a conceptual, integrated modeling framework illustrated with representative results and instructs users on combining the Boltzmann transport equation (BTE), particle-in-cell (PIC), and kinetic simulations to investigate tin (Sn) debris mitigation in extreme ultraviolet (EUV) lithography. The protocol includes the reflectivity of Mo/Si multilayer mirrors (MLM), sputtering yield, implantation depth, kinetic modeling, and BTE computation. BTE and PIC simulations are used to resolve the electron energy distribution function (EEDF) of hydrogen plasmas and analyze the generation and acceleration of energetic Sn ions under different plasma conditions. The influence of hydrogen flow on ion slowing and radiation efficiency is also quantified. Based on the ionization cross sections and dissociation channels of SnxHy species, the interaction potentials for Sn-H collision are computed using the density functional theory (DFT) method, which are used to calculate the implantation depth. In addition, the MLM reflectivity and sputtering yield from the interaction between Sn debris and the Ru coating on the MLM are calculated using a semi-empirical formula. By following this protocol, users can obtain key physical parameters relevant to Sn debris control, including sputtering yields, implantation depths, MLM reflectivity, and SH4 formation under various hydrogen plasma EEDFs. These outputs enable systematic evaluation of contamination, cleaning, and detection processes in EUV lithography systems.