An Integrated Multimethod Simulation Framework for Tin Debris Control in Extreme Ultraviolet Lithography.

Area of Science:

• Semiconductor Manufacturing
• Plasma Physics
• Computational Modeling

Background:

• Extreme ultraviolet (EUV) lithography is crucial for advanced semiconductor manufacturing.
• Tin (Sn) debris generation during EUV processes poses a significant challenge to system reliability and contamination.
• Effective mitigation strategies require a deep understanding of plasma-surface interactions and debris transport.

Purpose of the Study:

• To develop and present an integrated modeling framework for investigating tin (Sn) debris mitigation in EUV lithography.
• To provide a protocol for combining Boltzmann transport equation (BTE), particle-in-cell (PIC), and kinetic simulations.
• To enable quantitative analysis of key physical parameters influencing Sn debris control.

Main Methods:

• Utilized a hybrid simulation approach combining BTE and PIC methods to model hydrogen plasmas.
• Calculated electron energy distribution functions (EEDFs) and energetic ion generation.
• Employed density functional theory (DFT) for Sn-H collision potentials and semi-empirical formulas for multilayer mirror (MLM) reflectivity and sputtering yield.

Main Results:

• Quantified the influence of hydrogen flow on ion slowing and radiation efficiency.
• Computed Sn implantation depths based on DFT-derived interaction potentials.
• Determined MLM reflectivity and sputtering yields considering Sn debris interaction with Ru coatings.

Conclusions:

• The developed protocol enables users to obtain critical parameters for Sn debris control, including sputtering yields and implantation depths.
• The framework facilitates systematic evaluation of contamination, cleaning, and detection processes in EUV lithography.
• This integrated approach supports the optimization of EUV lithography systems by addressing debris mitigation challenges.