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Updated: Apr 15, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Published on: October 12, 2019

Direct Nanoscale Mapping of Band Alignment in Single-Layer Semiconducting Lateral Heterojunctions.

Chakradhar Sahoo¹, Suman Kumar Chakraborty², A Kousika³

¹Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark.

|April 13, 2026

Summary

Researchers precisely mapped electronic states in layered materials using nanoscale ARPES. This study reveals how band alignment in transition metal dichalcogenide heterostructures impacts electronic and quantum technologies.

Keywords:

2D transition metal dichalcogenides Nano-ARPES band alignment excitons lateral heterostructures

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Last Updated: Apr 15, 2026

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Published on: October 12, 2019

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Atomic-scale control of band alignment in lateral heterostructures (LHSs) of transition metal dichalcogenides (TMDCs) is crucial for advanced electronic, optoelectronic, and quantum devices.
Direct experimental characterization of interfacial electronic states with nanometer precision has been a significant challenge.

Purpose of the Study:

To directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs using nanoscale spatially resolved techniques.
To correlate interfacial electronic properties with material composition and interface sharpness.

Main Methods:

Angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES).
Spatially resolved photoluminescence spectroscopy.
Density functional theory (DFT) calculations.

Main Results:

Direct visualization of valence band maximum and exciton features across both sharp and graded interfaces in MoSe2-WSe2 LHSs.
Identification of type-II band alignments influenced by material composition and interstitial defects.
Experimental findings show close agreement with DFT predictions.

Conclusions:

Fundamental mechanisms governing electronic structure modulation at 1D TMDC heterointerfaces were elucidated.
Demonstrated a robust platform for precise band engineering in van der Waals materials for tailored device applications.