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SOI-Structured Piezoresistive Pressure Sensor with Integration of Temperature Sensor for Downhole Applications
José Mireles1, Abimael Jiménez1, Ángel Sauceda1
1Institute of Engineering and Technology, Universidad Autónoma de Ciudad Juárez, 450 Avenida del Charro, Ciudad Juárez 32310, Mexico.
None:
Micro-electro-mechanical systems (MEMS) sensors offer the benefits of compact size, lightweight design, and low cost, which has led to widespread use in consumer electronics, vehicles, healthcare, defense, and communications. As their performance has improved, MEMS sensors have also found applications in oil exploration and geophysical studies. Pressure and temperature measurements during hydraulic fracturing have long been employed to improve downhole conductivity during oil and gas extraction. Nevertheless, the development of high-precision MEMS sensors for oil exploration remains an active area of research. This paper presents the design, fabrication, packaging, and characterization of a silicon-on-insulator (SOI) MEMS piezoresistive pressure sensor integrated with a temperature sensor. It also describes the design of a chamber intended to emulate conditions at the bottom of oil exploration wells. The sensors were successfully designed and fabricated on the basis of physics-based simulations, deep reactive ion etching and anodic bonding. The pressure sensors, together with the signal-conditioning system, exhibited a linear response with a sensitivity of 0.0268 mV/V/MPa and maximum hysteresis of 5.3%.
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