Advancing EUV Patterning: Innovations in Resist Platforms, Patterning Strategies, and Computational Approaches

Area of Science:

• Materials Science
• Chemical Engineering
• Microelectronics Engineering

Background:

• Microelectronics advancements rely on shrinking feature sizes through lithography and patterning materials.
• Photoresist technology has evolved through various wavelengths, from 365 nm to 193 nm immersion lithography.

Purpose of the Study:

• To review the historical development of photoresist materials.
• To address the challenges and solutions in 13.5 nm extreme ultraviolet (EUV) lithography.
• To survey current state-of-the-art EUV resist materials and emerging patterning techniques.

Main Methods:

• Historical review of photoresist evolution.
• Analysis of challenges in EUV lithography, including stochastic effects and secondary electron chemistry.
• Survey of advanced resist materials (CARs, metal-organic, molecular glass, etc.).
• Brief discussion of directed self-assembly and nanoimprint lithography.

Main Results:

• EUV lithography presents unique challenges like stochastic effects and secondary electron chemistry.
• Various advanced photoresist materials are being developed for EUV, including CARs, metal-organic, and molecular glass resists.
• Computational chemistry and data-driven methods are increasingly important in resist design.

Conclusions:

• Connecting molecular design with lithographic performance is crucial for future photoresist development.
• Advanced patterning strategies beyond traditional lithography are being explored.
• Continued innovation in materials and computational approaches will drive microelectronics progress.