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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Equivalent Capacitance

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
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Equivalent Capacitance

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

Capacitors

Capacitors

Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
When a voltage source is connected to a capacitor, positive and negative charges accumulate on the opposite plates. This accumulation generates a potential difference that equals the product of the...

Capacitors and Capacitance

Capacitors and Capacitance

A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
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Scanning-probe Single-electron Capacitance Spectroscopy

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Published on: July 30, 2013

The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory.

Hyeon Woo Park¹, Won-Tae Koo², Dong Ik Suh²

¹Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.

Nature Communications

|April 14, 2026

Summary

Researchers explored how controlling dielectric layer thickness in nanoscale ferroelectric/dielectric capacitors affects capacitance. This work offers insights for developing advanced dynamic random access memory capacitors.

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Area of Science:

Materials Science
Condensed Matter Physics
Electrical Engineering

Background:

Ferroelectric thin films exhibit negative capacitance due to stray fields from bound charges.
Nanoscale cylindrical structures with ferroelectric/dielectric layers show unpredictable capacitance states.
Understanding capacitance behavior is crucial for next-generation memory devices.

Purpose of the Study:

To investigate the capacitance states (positive, infinite, negative) of Hf0.33Zr0.67O2/Al2O3 nanoscale cylindrical structures.
To analyze the influence of ferroelectric and dielectric layer thicknesses on capacitance.
To identify the key factors governing capacitance variations in these devices.

Main Methods:

Fabrication of thin ferroelectric (2.0-3.0 nm Hf0.33Zr0.67O2) and dielectric (1.0-3.0 nm Al2O3) layers in nanoscale cylinders.
Analytical modeling and numerical simulations using phase-field modeling.
Consideration of ferroelectric polarization, interfacial carrier compensation, and cylindrical geometry effects.

Main Results:

Demonstrated control over capacitance states (positive, infinite, negative) by tuning Al2O3 dielectric layer thickness.
Identified inhomogeneous stray field energy changes as critical for determining capacitance states.
Correlated capacitance variations with initial polarization charge compensation and leakage mechanisms.

Conclusions:

The study provides a precise model for predicting capacitance behavior in ferroelectric/dielectric nanoscale cylinders.
Guidelines are established for designing next-generation capacitors for dynamic random access memory.
Control over interfacial charge compensation and leakage is key to manipulating capacitance states.