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Updated: Apr 17, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Spin-valve like magnetoresistance and moderate anomalous Hall effect in CoRuMnSn
Anjan Bera1, Jadupati Nag1,2, P D Babu3
1Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India.
Abstract:
We report CoRuMnSn as a candidate material for spin-valve (SV) like features and moderate anomalous Hall effect, based on combined experimental and theoretical studies. It crystallizes in the F4-3 m space group with a 12.5% disorder between the Ru and Mn atoms, exhibiting a magnetic moment of 3.53μB/f.u. and a high Curie temperature (∼400 K). The magnetoresistance varies asymmetrically with field, indicating SV like behavior. The anomalous Hall conductivity (AHC) remains nearly constant (∼ -390 S cm-1at 2 K) across a wide temperature (T) range and the weakT-dependence of Hall resistivity suggests an intrinsic AHC mechanism.Ab-initiocalculations of electronic, magnetic, and transport properties agree well with experimental results. The band structure of ordered CoRuMnSn hosts four pairs of weyl points, contributing intrinsic Berry curvature to AHC (∼ -371 S cm-1). Simulations of experimentally observed Ru-Mn antisite disorder reveal pinning of those Mn atoms occupying the Ru sites, aligned antiferromagnetically with other magnetic atoms, thus reducing the net magnetization (3.69μB/f.u.), consistent with experiment. This pinning creates domains with antiferromagnetic/ferromagnetic interfaces, explaining the large asymmetric MR.
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