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Austin G Kuba1, Kerem Artuk1, Mostafa Othman1

  • 1Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IEM), Photovoltaics and Thin-Film Electronics Laboratory, 2000 Neuchâtel, Switzerland.

ACS Energy Letters
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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