A nitride-based non-volatile memory enabled by electric-field-induced phase transition

Non-volatile memory technology holds great promise for data storage and near-memory or in-memory computing. However, significant challenges remain, including programming latency, energy consumption, stability and endurance of the storage medium. Here we report an Al_0.7Sc_0.3N-based non-volatile memory device that exhibits outstanding performance, including ultralow switching voltage (<0.3 V), ultrafast write speed (<3 ns) and ultralow energy consumption (<150 fJ bit^-1). In particular, the device demonstrates exceptional stability and reliability, achieving a write endurance exceeding 10⁸ cycles at 583 K with minimal cycle-to-cycle and device-to-device variations. In situ scanning transmission electron microscopy analysis reveals that resistance switching is driven by an electric-field-induced phase transition between the wurtzite (high-resistance) and rocksalt (low-resistance) phases of Al_0.7Sc_0.3N. These results underscore the potential of electric-field-induced phase transition memory as a next-generation non-volatile memory solution, offering high speed, low power consumption and exceptional reliability-even under high temperatures-making it well suited for high-density data storage and advanced computing applications.