Thermoelectric metal chalcogenides: a platform for anion mixing studies
Oleksandr Dobrozhan1,2, Sajida Kousar1, Girish C Tewari1
1Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland. maarit.karppinen@aalto.fi.
None:
Metal chalcogenides represent state-of-the-art thermoelectric (TE) materials, both in practical TE energy conversion devices and in new TE material research. To further push the performance boundaries of these materials, the major challenge is to suppress the thermal conductivity as much as possible while maintaining high electrical transport properties. The strategies employed to address this challenge include band engineering, chemical composition tuning, and nano- and microstructural modification. Regarding chemical composition tuning, an effective approach specific to metal chalcogenide thermoelectrics is anion mixing through solid solution formation at a chalcogen site, where sulfur, selenium, and tellurium atoms can occupy the same crystallographic site. This perspectival review aims to provide first a wider overview of such possibilities among the metal chalcogenides in general and then highlight the recent research on three currently strongly emerging TE metal chalcogenide families: (i) different binary, ternary and quaternary copper chalcogenides, (ii) ternary cobalt antimony chalcogenides, and (iii) binary silver chalcogenides.
More Related Videos
10:42Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
Published on: December 29, 2016
04:22Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Related Concept Videos
Electrochemical Systems
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
The Thermodynamics of Mixing
