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Multifunctional Cu Doping Enhances Electron Transport and Thermoelectric Performance in n-Type BiSbSe3.

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Advanced Materials (Deerfield Beach, Fla.)
|April 20, 2026
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Copper doping enhances the thermoelectric performance of BiSbSe3 by improving charge transport and carrier mobility. This leads to higher efficiency in thermoelectric devices, making BiSbSe3 a promising material for energy conversion.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Bismuth antimony selenide (BiSbSe3) exhibits low lattice thermal conductivity due to its chain-like structure.
  • Weak inter-chain bonds in BiSbSe3 hinder carrier mobility, limiting its thermoelectric potential.

Purpose of the Study:

  • To investigate the effect of copper (Cu) doping on the thermoelectric properties of BiSbSe3.
  • To enhance carrier mobility and power factor through Cu incorporation.

Main Methods:

  • Cu doping was introduced into the BiSbSe3 lattice at substitutional and interstitial sites.
  • Thermoelectric properties, including power factor and figure of merit (ZT), were measured at elevated temperatures.
  • A single-leg thermoelectric device was fabricated to evaluate conversion efficiency.

Main Results:

  • Cu doping increased charge density, facilitating electron transport.
  • Optimized carrier concentration at high temperatures improved carrier mobility.
  • Achieved a 135% enhancement in average power factor (600–800 K) and a peak ZT of ~1.2 at 800 K.
  • Demonstrated a thermoelectric conversion efficiency of ~6.3% for a Cu-doped BiSbSe3 device.

Conclusions:

  • Cu-mediated charge-density modulation effectively decouples electron and phonon transport in BiSbSe3.
  • Copper doping presents a viable strategy to enhance the thermoelectric performance of low-cost BiSbSe3.
  • The optimized BiSbSe3-Cu material shows significant promise for practical thermoelectric applications.