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High-voltage nanosecond/subnanosecond pulse generators based on avalanche transistors.

Yuchen Cheng1,2, Qi Yuan1, Bowang Cheng1,2

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Avalanche transistors (ATs) are crucial for high-voltage, nanosecond pulse generation in modern pulsed-power systems. This review details AT circuit designs, challenges, and applications, highlighting their advantages for dual-use technology.

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Area of Science:

  • Electrical Engineering
  • Pulsed Power Technology
  • Semiconductor Devices

Background:

  • Pulsed-power technology is evolving towards dual-use applications, demanding higher voltages, faster rise times, and compact designs.
  • Avalanche transistors (ATs) are emerging as key switching devices due to their size, high pulse-repetition frequency (PRF), and fast switching capabilities.

Purpose of the Study:

  • To review and synthesize methods for generating high-voltage nanosecond/subnanosecond pulses using avalanche transistors.
  • To analyze triggering challenges, failure mechanisms, and mitigation strategies in AT-based circuits.

Main Methods:

  • Categorization of AT pulse generation schemes into basic, composite, and pulse-stacking circuits.
  • Analysis of triggering issues and failure modes, particularly in Marx bank circuits.
  • Summary of mitigation techniques, including auxiliary triggering and acceleration circuits.

Main Results:

  • Comparison of trade-offs between different AT generation circuit topologies.
  • Identification of pre-stage conduction failure and current filamentation as key failure mechanisms.
  • Outline of representative applications, including plasma actuation, biomedical uses, and high-speed imaging.

Conclusions:

  • Avalanche transistors offer significant advantages for next-generation pulsed-power systems.
  • Understanding and mitigating failure mechanisms are critical for reliable AT circuit operation.
  • Further development of AT pulse circuitry holds promise for diverse technological advancements.