Contact-First Integration toward Pristine Metal-MoS2 Interfaces.

Chaoni Zhan1,2,3, Ming Gao1,2,3, Yinghao Li1,2,3

  • 1State Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing 100029, China.

Summary

A new contact-first method creates clean, damage-free interfaces for two-dimensional (2D) semiconductor devices. This approach enhances performance and thermal stability in molybdenum disulfide (MoS2) transistors, paving the way for robust 2D electronics.

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