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Minimizing interface defects and enhancing optical brightness of µLEDs through polymeric encapsulants
Pranav P Gavirneni1, William S Wong2,3
1Department of Electrical Engineering, University of Waterloo, Waterloo, Canada.
Communications Engineering
|April 21, 2026
Summary
Researchers developed a new etching and encapsulation method for tiny Indium Gallium Nitride (InGaN) micro-light-emitting diodes (microLEDs). This process minimizes performance loss, enabling smaller, brighter displays for virtual reality and optical interconnects.
Area of Science:
- Solid State Physics
- Materials Science
- Optoelectronics
Background:
- High-resolution microLED arrays are crucial for advanced applications like optical interconnects and AR/VR displays.
- LED miniaturization is necessary for higher pixel density but often leads to reduced brightness due to surface recombination.
Purpose of the Study:
- To develop InGaN-based microLEDs with minimal performance degradation despite miniaturization.
- To investigate and mitigate sidewall effects in sub-10-micrometer microLEDs.
- To establish a model predicting microLED performance based on geometry.
Main Methods:
- A combined dry/wet etching technique was employed for microLED fabrication.
- Polymeric encapsulation was used to protect microLED sidewalls.
- A numerical model was developed to analyze microLED performance versus geometry.
Main Results:
- MicroLEDs with diameters as small as 6 µm showed negligible performance degradation.
- Achieved low surface recombination velocities (<10 cm s⁻¹).
- Demonstrated high wall plug efficiencies of 20.3% at 2.5 A cm⁻².
Conclusions:
- The developed fabrication process effectively suppresses sidewall effects in miniaturized InGaN microLEDs.
- The numerical model accurately predicts the transition to surface-limited behavior in microLEDs.
- This work enables the creation of smaller, brighter microLEDs for next-generation display and optical technologies.
