Flexible and Fully Printed Artificial Synaptic Devices Based on h-BN-Gated Tellurene Memtransistor

The memtransistor constructed using the emerging two-dimensional tellurene material has demonstrated significant potential for application in artificial synaptic devices and image recognition. However, conventional device fabrication processes, such as dry transfer, restrict tellurene's further application in flexibility and wearable electronics. Here, a fully printed, flexible tellurene field-effect transistor (FET) is demonstrated, consisting of a channel, gate dielectric layer, and contact electrodes, all of which are prepared using functional inks that include tellurene, h-BN, and graphene, respectively. Such a device integrates scalable ink formulations and neuromorphic functionality for advanced electronics, exhibiting relatively stable electrical performance even after 10,000 bending cycles at a curvature radius of 11.05 mm. Applying electric stimulation to the h-BN layer enables the realization of a bioinspired memtransistor, achieving paired-pulse facilitation, reconfigurable short-term plasticity to long-term plasticity transitions, and synaptic weight updates. Moreover, image recognition simulation using an artificial neural network achieves 93.91% accuracy on the Modified National Institute of Standards and Technology database, which can maintain 78.33% accuracy after introducing σ = 0.7 Gaussian noise. These results position printed tellurene FETs as promising, noise-resilient building blocks for scalable, flexible neuromorphic systems.