Related Experiment Video
Updated: Apr 24, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Ferroelectric Devices for In-Memory and In-Sensor Computing
Hong Fang1,2, Ronghuan Xie1,2, Qiang Cao1
1Spintronics Institute, University of Jinan, Jinan, P. R. China.
None:
Inspired by biological neural and sensory systems, the in-memory computing and in-sensor computing paradigms have emerged, which integrate computation with memory and processing with sensor respectively, offering a promising solution to address latency and power bottlenecks of traditional von Neumann architectures. Neuromorphic devices such as artificial synapse and neuromorphic sensors are the core components of these innovative computing paradigms. Among various types of neuromorphic devices, ferroelectric devices can not only emulate synaptic weight updates via electric-field-induced dynamic modulation of conductance, but also sense and process multimodal physical stimuli, such as light, mechanical force, and heat. Such multifunctionality enables the integration of sensing, memory, and computation at the device level, positioning ferroelectric devices as an ideal platform for neuromorphic computing and sensing systems. Herein, we present a systematic review of ferroelectric neuromorphic devices for in-memory computing and in-sensor computing. The applications of ferroelectric devices as artificial synapses in in-memory computing are summarized. Furthermore, we examine the applications of ferroelectric devices as sensing elements in in-sensor computing systems and summarize the latest research advances in these fields. Finally, this review outlines the key challenges faced by ferroelectric neuromorphic devices and proposes future development directions to promote their practical applications.
More Related Videos
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
10:05In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
Published on: September 20, 2021
Related Concept Videos
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Types of Semiconductors
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Electrochemical Systems
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...