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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

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MgO-Driven High-Entropy Engineering in (Bi_0.5Na_0.5)TiO₃-Based Ceramics for Superior Energy Storage Performance.

Meiyue Li^1,2, Fan Zhang^1,2, Jihang Liu^1,2

¹School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.

ACS Applied Materials & Interfaces

|April 24, 2026

Summary

High-entropy engineering using MgO in lead-free ceramics significantly boosts energy storage for pulsed power devices. This approach enhances dielectric properties, achieving high energy density and efficiency for advanced capacitor applications.

Keywords:

(Bi0.5Na0.5)TiO3-based ceramics MgO doping energy storage performance high-entropy design lead-free dielectrics

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Area of Science:

Materials Science
Ceramics Engineering
Energy Storage

Background:

High-performance dielectric capacitors are crucial for miniaturizing pulsed power devices.
High-entropy design is a promising strategy for enhancing ceramic energy storage capabilities.
Lead-free (Bi0.5Na0.5)TiO3-based ceramics are explored for their energy storage potential.

Purpose of the Study:

To develop lead-free dielectric ceramics with superior energy storage properties using MgO-driven high-entropy engineering.
To investigate the effects of MgO doping on the microstructure and dielectric properties of (Bi0.5Na0.5)TiO3-based ceramics.
To optimize high-entropy ceramics for advanced pulsed power applications.

Main Methods:

Fabrication of lead-free (Bi0.5Na0.5)TiO3-based ceramics via MgO-driven high-entropy engineering.
Introduction of (Ca0.5Ba0.5)(Zr0.5Hf0.5)O3 (CBZH) into (Bi0.5Na0.5)TiO3-(Sr0.7Bi0.2)TiO3 (BNT-SBT) to increase configurational entropy.
Incorporation of MgO to enhance high-entropy effects, influencing phase evolution, grain refinement, bandgap widening, and polar nanoregion formation.

Main Results:

MgO doping induced phase evolution from rhombohedral to tetragonal, refined grains, and widened the bandgap.
Enhanced relaxation behavior and formation of polar nanoregions were observed.
A 10 mol % MgO-doped ceramic achieved a recoverable energy density of ~8.30 J/cm3 and efficiency of ~85.0% at 647 kV/cm breakdown strength.
Excellent thermal and frequency stability, along with charge-discharge capability, were demonstrated.

Conclusions:

MgO-driven high-entropy engineering is an effective strategy for developing lead-free dielectric ceramics with superior energy storage.
The optimized ceramic exhibits excellent comprehensive energy storage properties suitable for pulsed power devices.
This research provides a pathway for advanced lead-free dielectric materials in energy storage applications.