Related Experiment Video
Updated: Apr 27, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
Strongly Nonlinear Nanocavity Exciton Polaritons in Gate-Tunable Monolayer Semiconductors
Zhi Wang1, Bumho Kim1, Bo Zhen1
1University of Pennsylvania, Department of Physics and Astronomy, Philadelphia, Pennsylvania 19104, USA.
None:
Achieving optical nonlinearities at ultralow light intensities in solid-state platforms is essential for advancing nonlinear and quantum photonic technologies. A promising approach involves coupling excitons to photons in optical cavities to create exciton polaritons, where effective photon-photon interactions are mediated by the intrinsic excitonic nonlinearity. However, realizing strong polariton nonlinearities within a scalable architecture remains a significant experimental challenge. Here, we demonstrate highly nonlinear two-dimensional exciton polaritons by coupling a charge-tunable MoSe_{2} monolayer to a planar photonic crystal nanocavity. The pronounced excitonic resonance of the monolayer, combined with its seamless integration with the planar nanocavity, facilitates robust exciton-photon hybridization. Remarkably, the strong mode confinement of the nanocavity substantially enhances polariton-polariton interactions, enabling all-optical switching of the cavity spectrum with excitation energies as low as ∼4 fJ-several orders of magnitude below previously reported thresholds in 2D exciton-polariton systems. Pump-probe spectroscopy reveals that this switching operates on an ultrafast timescale of a few picoseconds. Our Letter establishes a robust platform for nonlinear 2D polaritonics with broad applications in integrated photonic technologies, including all-optical neuromorphic computing and quantum photonic information processing.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

