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Updated: Apr 28, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Enhanced Performance of IZO/ZnO Heterostructure Thin-Film Transistors and Its Biosensing Applications via
Da Ye Kim1, Noah Jang1, Hyunjun Kim1
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Abstract:
We report IZO/ZnO heterostructure thin film transistors (TFTs) fabricated by a single-precursor sol-gel process where a ZnO-rich surface region forms on an In-based oxide layer after annealing. The heterostructure improves the electrical response compared to a single-layer oxide TFT and provides a probe-free platform for biomolecule detection. As a demonstration, we detect pUC-18 plasmid DNA (2686 bp) over concentrations from 1 pg/mL to 10 ng/mL using transfer/output-curve changes as the sensing signal. The device exhibits a pronounced negative shift of threshold voltage and a strong increase in saturated current after exposure, enabling high sensitivity at low concentration; in particular, sensitivity exceeding 200% is obtained at 1 pg/mL, corresponding to a limit of detection of 1 pg/mL. These results suggest that the IZO/ZnO heterostructure TFT can serve as a simple and rapid probe-free biosensing platform produced via a low-cost solution process.
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