Control of Microstructure, Trap Levels, and Trap Distribution in HfO₂ Films Grown by Atomic Layer Deposition

HfO₂ films have become a critical component for advanced electronics and a wide range of applications. However, their implementation requires control of their microstructure and defects, which often act as charge carrier traps, leading to leakage current in devices and hindering their dielectric properties. Here, we deposit HfO₂ thin films by atomic layer deposition (ALD) on sapphire, Ga₂O₃, and InGaO₃ substrates at low temperature and investigate the dependence of their crystal structure on substrate type, annealing, and thickness. X-ray diffraction measurements showed that alloying Ga₂O₃ with a modest amount of Indium transferred HfO₂ films from amorphous to polycrystalline, an important finding that may be applicable to the deposition of other material systems. The study also presents an interesting approach to measuring shallow and deep traps formed in the films and shows how to control their levels and distributions in the band gap. The measurements reveal that the difference in band gap between the substrate and film, as well as the presence of impurities, strongly influences trap densities and depths. Electron paramagnetic resonance (EPR) measurements were performed to probe the electronic structure of specific point defects detectable by EPR and to correlate these results with trap measurements.