Oxygen Storage Capacity and CO Oxidation Performance of CeO₂ Nano-Octahedra with Saturated In³⁺ Doping

CeO₂ is widely studied in catalysis owing to its Ce⁴⁺/Ce³⁺ redox couple and oxygen storage capacity (OSC), but its low-temperature redox activity remains a challenge. To address this, this study investigates the effects of saturated In³⁺ doping (1 mol.%) on the structural, redox, and catalytic properties of nano-octahedral CeO₂. Structural and chemical analyses reveal that In³⁺ doping induces lattice contraction from 5.4171 to 5.4129 Å, increases oxygen vacancy concentration from 29.7% to 39.8%, and raises surface Ce³⁺ fraction from 27.6% to 30.0%. Consequently, H₂-TPR measurements show that the surface reduction peak temperature decreases from 548 to 406 °C and the onset reduction temperature shifts from 309 °C to 183 °C. Quantitative OSC analysis further demonstrates that the low-temperature OSC increases from 13.17 to 20.57 mmol O₂/mol and the high-temperature OSC from 53.36 to 59.38 mmol O₂/mol upon doping. As a result of these enhancements, CO-TPSR tests reveal improved low-temperature CO oxidation performance, with the CO₂ light-off temperature decreasing from 99 to 72 °C and the rapid oxidation temperature from 153 to 96 °C. Notably, H₂O and H₂ signals are detected during CO-TPSR, and FTIR analysis confirms the enrichment of surface hydroxyl groups in the doped sample, offering new mechanistic insights into the involvement of surface species in the reaction pathway. Overall, saturated In³⁺ doping effectively enhances the oxygen vacancy concentration, surface reducibility, and CO oxidation activity of nano-octahedral CeO₂.