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Fabrication of Nitrogen-Containing Micro-Expanding Graphite Composites from Waste Graphite Electrodes for Enhanced
Xu Fan1, Zhuohan Lv1, Hongyan Nan1,2
1State Key Laboratory of Critical Metals Beneficiation, Metallurgy and Purification, School of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, China.
Abstract:
The large-scale generation of waste graphite not only poses environmental challenges but also provides an opportunity for resource recovery. This study proposes a sustainable strategy that utilizes the graphite cutting waste produced during the production of large graphite electrodes through chemical intercalation, microwave-assisted expansion, and in situ urea nitrogen doping techniques to prepare nitrogen-containing micro-expanded graphite (NMG) composite materials. Structural analysis reveals that the nitrogen-doped amorphous carbon layer formed on the expanded graphite (EG) matrix effectively suppresses excessive expansion while preserving its typical worm-like interlayer morphology and porous structure. XPS confirms successful nitrogen doping with predominant pyridinic-N configuration, introducing abundant defect sites and enhancing lithiophilicity. As an anode for LIBs, NMG delivers an exceptional initial discharge capacity of 1907.5 mAh g-1 at 20 mA g-1 and maintains 798.2 mAh g-1 after 50 cycles, nearly twice that of purified waste graphite (G). Remarkably, after 1000 cycles at 1 A g-1, it retains 650.4 mAh g-1 with 89.9% capacity retention, indicating an electrochemical activation process. Kinetic analysis reveals that the superior performance originates from synergistic diffusion-controlled intercalation and surface-dominated pseudocapacitance, with nitrogen-doped defect sites and hierarchical pore architecture promoting rapid ion/electron transport and surface faradaic reactions. This work demonstrates a viable pathway for value-added upcycling of waste graphite while providing insights into designing high-performance anodes through integrated defect engineering and heteroatom doping.

