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Interfacial Reaction Competition in NiO/SiC for High-Performance UV Photodetection
Shen Zhang1,2, Qian Yang1, Yuheng Gu1
1Institute of Quantum and Sustainable Technology, School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, China.
ACS Nano
|April 27, 2026
Summary
A novel self-organized oxygen-gating strategy engineers the NiO/4H-SiC interface, significantly reducing dark current and boosting photodetector performance. This method creates a buried bilayer interphase, enhancing device speed and sensitivity.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Oxide/wide-bandgap semiconductor heterojunctions face performance limitations due to interfacial defects caused by lattice and chemical mismatch.
- These defects hinder the efficiency and speed of electronic and photonic devices.
Purpose of the Study:
- To develop a strategy for engineering interfacial properties in oxide/wide-bandgap semiconductor heterojunctions.
- To address the critical issue of interfacial defects and improve device performance, particularly for photodetectors.
Main Methods:
- A self-organized oxygen-gating (SOOG) strategy was employed.
- Competing interfacial oxidation and Ni-Si interdiffusion were harnessed to form an ultrathin SiOx/Ni-Si bilayer interphase at the NiO/4H-SiC interface.
Main Results:
- The SOOG-engineered interphase led to an over 85% reduction in dark current.
- A 1800% enhancement in responsivity was observed.
- Ultrafast response times of 3/5 ms were achieved, nearly two orders of magnitude faster than untreated devices.
Conclusions:
- The SOOG strategy offers an effective route for buried interphase engineering by utilizing reaction competition.
- This approach successfully mitigates interfacial defects in oxide/wide-bandgap semiconductor heterojunctions.
- The findings enable the development of next-generation photodetectors with high response speed and sensitivity, applicable to broader electronic and photonic devices.
