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Spin-Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking
Zhenyi Zheng1,2, Shu Shi1, Zhongran Liu3
1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|April 28, 2026
Summary
Researchers discovered a new way to enhance spin-orbit torque (SOT) efficiency in spintronic devices. By manipulating crystal symmetry in SrRuO3 with ferroelectric materials, they achieved over 60% SOT enhancement for low-power electronics.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Spin-orbit torque (SOT) is key for low-power spintronic devices.
- Inversion symmetry breaking (ISB) influences SOT efficiency, but methods for crystal ISB are underexplored.
- Spatial ISB at interfaces is the focus of current research.
Purpose of the Study:
- To investigate the impact of crystal ISB on SOT generation efficiency.
- To explore a novel method for inducing and controlling crystal ISB.
- To demonstrate enhanced SOT efficiency in SrRuO3 through ferroelectric manipulation.
Main Methods:
- Utilized scanning transmission electron microscopy (STEM) to characterize crystal structure.
- Employed electrical harmonic measurements to quantify SOT efficiency.
- Investigated SrRuO3 (SRO) in conjunction with adjacent ferroelectric (FE) materials.
Main Results:
- Observed and characterized an exotic crystal ISB in SRO, involving a c/a crystal ratio change due to Ru cation displacement.
- Demonstrated reversible manipulation of this crystal ISB via FE polarization.
- Achieved a >60% enhancement in SOT efficiency in the SRO layer due to the induced crystal ISB.
Conclusions:
- Crystal ISB, induced by FE polarization, significantly enhances SOT efficiency.
- This provides a new strategy for designing efficient SOT materials.
- The findings pave the way for developing advanced low-power spintronic devices.
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