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High-Performance Linear Polarization-Sensitive WSe2/SnS0.25Se0.75 Heterojunction Photodetectors: Synergy of Type-II
Dan Tang1, Jiahao Gao1, Peng Liu1
1Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), Faculty of Engineering, South China Normal University, Foshan 528200, P. R. China.
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Linear polarization-sensitive photodetectors play a pivotal role in enhancing optical signal acquisition and suppressing stray light, thereby facilitating improved target detection and identification in complex environments such as low-light conditions and haze. Emerging two-dimensional (2D) in-plane anisotropic materials offer significant advantages for simplifying optical systems owing to their facile integration onto complex architectures and superior photodetection capabilities. In this work, we report the fabrication of a linear polarization-sensitive photodetector based on a WSe2/SnS0.25Se0.75 van der Waals heterojunction. The electrical conductivity anisotropy between the armchair and zigzag directions in the WSe2/SnS0.25Se0.75 heterojunction can be dynamically tuned via gate modulation, with values ranging from less than 1 to as high as 257. Furthermore, polarization-dependent carrier transport measurements reveal a significant anisotropy in mobility with a ratio of μarmchair/μzigzag reaching 2.76. The fabricated device exhibits high polarization sensitivity and remarkable photoresponse performance along the armchair orientation, including a responsivity of 2.57 A/W, a detectivity of 5.76 × 1010 Jones, a rise/decay times of 2.86/2.24 ms, and a photocurrent anisotropic ratio of 7.8. These findings reveal the physical mechanisms in 2D anisotropic heterostructures and provide design principles for high-performance linear polarization-sensitive photodetectors.

