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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Sliding Ferroelectricity in MoS2/ReS2 Heterojunction for a Sensitive and Reconfigurable Bioelectronic Interface
Weijia Mu1, Changming Ke2, Ning Guo3
1Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China.
None:
Two-dimensional (2D) sliding ferroelectrics promise an ultrathin, fatigue-free platform for reconfigurable electronics, but their development has been hindered by a strict requirement for lattice matching, which limits the material choice and functionality. Here, we overcome this limitation by demonstrating room-temperature sliding ferroelectricity in a lattice-mismatched semiconducting MoS2/ReS2 heterobilayer. This van der Waals semiconductor displays robust switchable resistive states with submicrosecond dynamics and an endurance exceeding 105 cycles. Building on these properties, we developed a ferroelectric field-effect transistor-based biosensor (bio-FeFET) for label-free detection of 8-hydroxy-2'-deoxyguanosine (8-OHdG), a key biomarker for oxidative DNA damage. The polarization-induced field enhances electrostatic enrichment of negatively charged aptamers, achieving high sensitivity and an ultralow limit of detection (LoD). Importantly, polarization reversal enables a reconfigurable "write-read-erase" operation, thereby allowing the electrical regeneration of the sensing interface without chemical treatment. These findings not only broaden the material horizon for sliding ferroelectrics but also support the development of high-sensitivity, reconfigurable bioelectronic interfaces for logic-integrated sensing.
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