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A Universal Approach to Enhancing Silicon Hot-Carrier Photodetectors for CMOS-Compatible SWIR Imaging
Eui-Hyoun Ryu1,2, Hyun Woo Ko1,3, Sunghyun Hwang1,4
1Center for Quantum Technology, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|April 30, 2026
Summary
Researchers enhanced silicon hot-carrier photodetectors for short-wavelength infrared (SWIR) detection using a quasi-generalized antireflection coating (QARC). This breakthrough significantly boosts quantum efficiency, enabling practical SWIR imaging with CMOS-compatible sensors.
Area of Science:
- Optoelectronics
- Materials Science
Background:
- Silicon hot-carrier photodetectors are CMOS-compatible for SWIR detection.
- Low quantum efficiency hinders their use in imaging systems.
Purpose of the Study:
- To enhance the quantum efficiency of silicon hot-carrier photodetectors.
- To enable practical SWIR imaging using CMOS-compatible technology.
Main Methods:
- Developed a quasi-generalized antireflection coating (QARC).
- Integrated QARC with ultrathin metal electrodes in metal-silicon Schottky junctions.
- Tested device performance with ultrathin copper electrodes.
Main Results:
- QARC significantly enhanced optical absorption in metal electrodes.
- Achieved responsivity of 7.8 mA/W and EQE of 0.82% at 1310 nm.
- Demonstrated the first SWIR imaging with a CMOS-compatible silicon hot-carrier photodetector.
Conclusions:
- QARC is a universal method to boost silicon hot-carrier photodetector quantum efficiency.
- Enhanced devices offer higher signal and sharper features for low-light SWIR imaging.
- This technology paves the way for practical, CMOS-compatible SWIR imaging sensors.
