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Updated: May 2, 2026

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells
Published on: March 19, 2017
Multidentate Chelation Modulates PbI2 Crystallization and Buried-Interface Formation in Perovskite Solar Cells
Tong Zhou1,2, Yaqi Li2, Wenting Zhao2
1The Centre of Nanoscale Science Technology, Key Laboratory of Functional Polymer Materials (Ministry of Education), Frontiers Science Center for New Organic Matter (Ministry of Education), State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, China.
None:
The buried interface in two-step processed perovskite solar cells (PSCs) remains a major performance-limiting factor, primarily due to incomplete PbI2 conversion and defect-induced nonradiative recombination. Here, we demonstrate a rational molecular engineering strategy by employing a multifunctional additive, pentaerythritol tetrakis(2-mercaptoacetate) (PTAC-SH), featuring synergistic thiol and carbonyl coordination sites. Multidentate chelation between PTAC-SH and Pb2+ directs the formation of porous PbI2 scaffold, enabling efficient infiltration, and conversion of organic salts. Notably, PTAC-SH spontaneously enriches at the buried interface during crystallization, enabling in situ and targeted passivation of interfacial defects. Consequently, PTAC-SH simultaneously regulates crystallization to yield large-grained, high-quality perovskite films, effectively passivates interfacial defects, and optimizes energy-level alignment. As a result, FA0.84MA0.16PbI3-based devices incorporating PTAC-SH achieve a champion power conversion efficiency (PCE) of 25.33% with exceptional operational stability, retaining 95% of the initial PCE after 1700 h of maximum power point tracking. The generality of this approach is further corroborated in FA0.98Cs0.02PbI3-based devices, delivering a champion PCE of 26.07% with a high open-circuit voltage of 1.199 V. This work highlights the pivotal role of structure-guided molecular design for concurrently PbI2 template engineering and buried-interface optimization in high-performance PSCs.
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