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Area of Science:

  • Materials Science
  • Organic Electronics
  • Radiation Physics

Background:

  • Organic semiconductors are being explored for electronics in extreme environments.
  • Assessing their radiation hardness is crucial for applications like space exploration.

Purpose of the Study:

  • To evaluate the radiation hardness of fullerene C60 and PC61BM thin films.
  • To determine the suitability of these organic semiconductors for radiation-hard electronic devices.

Main Methods:

  • Thin films of fullerene C60 and PC61BM were fabricated.
  • Devices (lateral resistors and field-effect transistors) were exposed to high doses of 60Co gamma rays (5-8 MGy).
  • Device performance was analyzed post-irradiation.

Main Results:

  • Exceptional radiation hardness was observed in both pristine fullerene C60 and PC61BM films.
  • Devices maintained functionality even after exposure to ultra-high gamma ray doses.
  • No significant degradation was noted, indicating high stability.

Conclusions:

  • Fullerene C60 and PC61BM exhibit excellent radiation resistance.
  • These organic semiconductors hold significant promise for developing radiation-hard electronics.
  • The findings support the use of organic electronics in harsh environments, including outer space.