Radiation-hard organic electronics with fullerene-based semiconductors

Area of Science:

• Materials Science
• Organic Electronics
• Radiation Physics

Background:

• Organic semiconductors are being explored for electronics in extreme environments.
• Assessing their radiation hardness is crucial for applications like space exploration.

Purpose of the Study:

• To evaluate the radiation hardness of fullerene C60 and PC61BM thin films.
• To determine the suitability of these organic semiconductors for radiation-hard electronic devices.

Main Methods:

• Thin films of fullerene C60 and PC61BM were fabricated.
• Devices (lateral resistors and field-effect transistors) were exposed to high doses of 60Co gamma rays (5-8 MGy).
• Device performance was analyzed post-irradiation.

Main Results:

• Exceptional radiation hardness was observed in both pristine fullerene C60 and PC61BM films.
• Devices maintained functionality even after exposure to ultra-high gamma ray doses.
• No significant degradation was noted, indicating high stability.

Conclusions:

• Fullerene C60 and PC61BM exhibit excellent radiation resistance.
• These organic semiconductors hold significant promise for developing radiation-hard electronics.
• The findings support the use of organic electronics in harsh environments, including outer space.