High-speed Si-based GeSn receiver for extended-wavelength communication

High-speed Si-based germanium-tin (GeSn) photodetectors for extended-wavelength optical communication are demonstrated. Operating under a low bias of -2.4 V, the bare detector achieves a 3-dB bandwidth of 51.7 GHz. A significant advancement is made by co-packaging the detectors with custom-designed transimpedance amplifiers in a dual-channel configuration, enabling 2 × 50 Gbps data transmission. This work provides a key solution toward the integration of low-power GeSn detectors into future monolithic on-chip optical links.