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High-speed Si-based GeSn receiver for extended-wavelength communication.
Optics Letters
|May 1, 2026
Summary
High-speed silicon-based germanium-tin (GeSn) photodetectors achieve 51.7 GHz bandwidth for optical communication. Co-packaged with amplifiers, they enable 2x50 Gbps data transmission, advancing on-chip optical links.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Devices
Background:
- Silicon photonics is crucial for optical communication.
- Germanium-tin (GeSn) alloys offer potential for extended wavelength detection.
- Integration of GeSn photodetectors with silicon electronics is challenging.
Purpose of the Study:
- To demonstrate high-speed silicon-based GeSn photodetectors.
- To enable extended-wavelength optical communication.
- To facilitate integration into monolithic optical links.
Main Methods:
- Fabrication of GeSn photodetectors on silicon substrates.
- Characterization of photodetector performance, including bandwidth and responsivity.
- Co-packaging with custom transimpedance amplifiers (TIAs).
Main Results:
- Achieved a 3-dB bandwidth of 51.7 GHz at -2.4 V bias.
- Demonstrated dual-channel 2x50 Gbps data transmission.
- Showcased low-power operation suitable for integration.
Conclusions:
- High-speed GeSn photodetectors are viable for optical communication.
- Co-packaging with TIAs enables high data rates.
- This technology is a key solution for future on-chip optical interconnects.
